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SUD40N02-08
Vishay Siliconix
SPECIFICATIONS (T J = 2 5 _ C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ a
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current b
V (BR)DSS
V GS(th)
I GSS
I DSS
I D(on)
V GS = 0 V, I D = 250 m A
V DS = V GS , I D = 250 m A
V DS = 0 V, V GS = " 12 V
V DS = 20 V, V GS = 0 V
V DS = 20 V, V GS = 0 V, T J = 125 _ C
V DS = 5 V, V GS = 4.5 V
V GS = 4.5 V, I D = 20 A
20
0.6
40
0.0068
" 100
1
50
0.0085
V
nA
m A
A
Drain-Source On-State Resistance b
r DS(on)
V GS = 4.5 V, I D = 20 A, T J = 125 _ C
0.0104
0.013
W
V GS = 2.5 V, I D = 20 A
0.011
0.014
Forward Transconductance b
g fs
V DS = 5 V, I D = 40 A
20
S
Dynamic a
Input Capacitance
C iss
2660
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
Gate-Source Charge c
Gate-Drain Charge c
C oss
C rss
Q g
Q gs
Q gd
V GS = 0 V, V DS = 20 V, f = 1 MHz
V DS = 10 V, , V GS = 4.5 V, , I D = 40 A
730
375
26
5
7
35
pF
nC
Gate Resistance
Turn-On Delay Time c
R g
t d(on)
1
20
3.7
35
W
Rise Time c
Turn-Off Delay
Time c
t r
t d(off)
V DD = 10 V, R L = 0.25 W
I D ^ 40 A, V GEN = 4.5 V, R G = 2.5 W
120
45
190
70
ns
Fall Time c
t f
20
35
Source-Drain Diode Ratings and Characteristic (T C = 25 _ C)
Pulsed Current
I SM
100
A
Diode Forward
Voltage b
V SD
I F = 100 A, V GS = 0 V
1.2
1.5
V
Source-Drain Reverse Recovery Time
t rr
I F = 40 A, di/dt = 100 A/ m s
35
70
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 m s, duty cycle v 2%.
c. Independent of operating temperature.
www.vishay.com
2
Document Number: 71422
S-31724—Rev. B, 18-Aug-03
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